Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111).
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DOI: 10.1021/acsami.1c23381
Abstract: Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced semiconductor materials, is essential and critical for a broad range of applications in electronics, optoelectronics, quantum photonics, and renewable energy. To date, however,… read more here.
Keywords: iii nitride; lattice polarity; interfacial modulated; nitride heterostructures ... See more keywords