Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography
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DOI: 10.1002/admi.201700622
Abstract: Pulsed laser atom probe tomography (APT) has enabled the investigation of semiconducting materials at sub-nm length scales and 10 ppm chemical sensitivity. This has enabled APT to be the best technique for nanoscale detection of… read more here.
Keywords: atom probe; interfacial profiles; probe tomography;