Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications
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DOI: 10.3390/en13246583
Abstract: This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bus converter (IBC) as part… read more here.
Keywords: intermediate bus; optimized design; power; converter using ... See more keywords