Impact of thermal annealing on internal device parameters of GaAs 0.965 Bi 0.035 /GaAs 0.75 P 0.25 quantum well lasers
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DOI: 10.1049/iet-opt.2018.5031
Abstract: The impact of post-growth thermal annealing on the internal device parameters such as internal loss ( α i ), internal differential quantum efficiency (η 0 d ) and modal material gain (Γ g 0J )… read more here.
Keywords: thermal annealing; device parameters; quantum well; internal device ... See more keywords