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Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202203954
Abstract: Growth of Cu(In,Ga)Se2 (CIGS) absorbers under Cu‐poor conditions gives rise to incorporation of numerous defects into the bulk, whereas the same absorber grown under Cu‐rich conditions leads to a stoichiometric bulk with minimum defects. This…
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Keywords:
superior properties;
internal interfaces;
indicating superior;
fingerprints indicating ... See more keywords