Internal structuring of gallium arsenide using short laser pulses.
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DOI: 10.1364/oe.471432
Abstract: Laser writing inside semiconductors attracts attention as a possible route for three-dimensional integration in advanced micro technologies. In this context, gallium arsenide (GaAs) is a material for which the best conditions for laser internal modification… read more here.
Keywords: laser; structuring gallium; gallium arsenide; internal structuring ... See more keywords