The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures
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DOI: 10.1016/j.mssp.2021.105694
Abstract: Abstract This work presents the development of Fe ion implantation processes for the fabrication of thermally stable isolation of AlGaN/GaN high electron mobility transistors (HEMTs). Experiments, carried out by the triple Fe+ implantation into AlGaN/GaN… read more here.
Keywords: algan gan; gan hemt; isolation; interplay damage ... See more keywords