Uphill diffusion of Si-interstitial during boron diffusion in silicon
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DOI: 10.1007/s12648-017-1024-0
Abstract: Abstract The phenomenon of uphill diffusion has been considered because of its frequent appearance in multicomponent systems. Several studies have been carried out to recommend the treatment for uphill diffusion and it is found that… read more here.
Keywords: diffusion interstitial; diffusion; interstitial boron; silicon ... See more keywords