Tactfully decoupling interdependent electrical parameters via interstitial defects for SnTe thermoelectrics
Sign Up to like & getrecommendations! Published in 2020 at "Nano Energy"
DOI: 10.1016/j.nanoen.2019.104292
Abstract: Abstract SnTe is a promising alternative of the moderate-temperature thermoelectric material PbTe owing to its earth-abundant and nontoxic nature. However, its several shortcomings, such as small Seebeck coefficient thus poor power factor and upper lattice… read more here.
Keywords: power; seebeck coefficient; snte; electrical parameters ... See more keywords
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with SubĪ¼m Channel Lengths.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c07258
Abstract: Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry… read more here.
Keywords: gate stack; oxygen interstitial; thin films; interstitial defects ... See more keywords
Interstitial Defects Improving Thermoelectric SnTe in Addition to Band Convergence
Sign Up to like & getrecommendations! Published in 2017 at "ACS energy letters"
DOI: 10.1021/acsenergylett.6b00671
Abstract: SnTe, as a top Pb-free alternative to PbTe, attracts extensive attention for thermoelectric applications. For thermoelectric performance enhancement, successful electronic strategies are typified by band convergence and resonant doping, while effective thermal strategies include nanostructuring… read more here.
Keywords: defects improving; snte; interstitial defects; band convergence ... See more keywords
Decisive role of interstitial defects in half-Heusler semiconductors: An ab initio study
Sign Up to like & getrecommendations! Published in 2021 at "Physical Review Materials"
DOI: 10.1103/physrevmaterials.5.035407
Abstract: Half-Heusler semiconductors satisfying 18-electron rule typically display promising characteristics for thermoelectric applications. A persistent inconsistency between the type of charge carriers in some of these alloys as obtained from experiment and theory however casts serious… read more here.
Keywords: interstitial defects; heusler; heusler semiconductors; half heusler ... See more keywords