Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires.
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DOI: 10.1021/acs.nanolett.7b03414
Abstract: Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 μm wavelength window with picosecond response times. Incorporating nanowires as active media could enable… read more here.
Keywords: intersubband; intersubband photodetection; near infrared; infrared intersubband ... See more keywords