Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals
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DOI: 10.1038/s41598-017-05651-z
Abstract: The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In)… read more here.
Keywords: permittivity; single crystals; doped tio2; intrinsic enhancement ... See more keywords