Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering
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DOI: 10.7567/apex.11.031301
Abstract: We demonstrated the deposition of high-quality intrinsic hydrogenated amorphous silicon (i-a-Si:H) passivation layers for silicon heterojunction (SHJ) solar cells by facing target sputtering (FTS). The RF power of FTS significantly affects the electrical properties of… read more here.
Keywords: silicon passivation; intrinsic hydrogenated; power; hydrogenated amorphous ... See more keywords