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Published in 2020 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.9b19697
Abstract: To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a…
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Keywords:
gan electronics;
intrinsic limits;
toward intrinsic;
limits gan ... See more keywords
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Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2762158
Abstract: Two-dimensional semiconductors provide excellent electrostatic control that is critical for scaled nodes. However, due to their lower dimensionality, contact resistance can be a limiting factor for performance of devices based on these materials. In this…
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Keywords:
contact resistance;
intrinsic limits;
limits contact;
transition metal ... See more keywords