LAUSR

Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites

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1 Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202205055

Abstract: The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results… read more here.

Keywords: transistors based; trap free; based epitaxial; intrinsic trap ... See more keywords