Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400324
Abstract: Charged domain walls in ferroelectrics hold great promise for applications in ferroelectric random‐access memory (FeRAM), with advantages such as low energy consumption, high density, and non‐destructive operation. Due to the mechanical compatibility condition, the neutral… read more here.
Keywords: charged domain; intrinsically stable; thin films; ferroelectric thin ... See more keywords