An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3
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DOI: 10.3390/ma15113864
Abstract: In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi2Se3. The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped… read more here.
Keywords: topological insulator; magnetism; efficient dopant; magnetism topological ... See more keywords