Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5066586
Abstract: By introducing a thin non-stoichiometric CeO2-x switching layer between the high oxygen affinity metal TaN top electrode and the TiO2 layer in a TaN/CeO2-x/TiO2/Pt bilayer (BL) device, it is possible to enhance the endurance characteristics… read more here.
Keywords: introducing thin; stoichiometric ceo2; non stoichiometric; layer ... See more keywords