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Published in 2020 at "Nanoscale"
DOI: 10.1039/d0nr04402d
Abstract: Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that…
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Keywords:
invasive metal;
hall;
semiconductor;
metal ... See more keywords