Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses
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DOI: 10.1016/j.microrel.2019.113561
Abstract: Abstract Layout and profile adjustments are presented based on TCAD simulation to improve the inverse-mode performances of silicon-germanium heterojunction bipolar transistor (SiGe HBT). Then the single event transient (SET) and total ionizing dose (TID) sensitivity… read more here.
Keywords: mode; set tid; sige hbt; layout profile ... See more keywords
Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications
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DOI: 10.1109/tdmr.2018.2878471
Abstract: The cryogenic performance of radiation-hardened radio-frequency (RF) low-noise amplifiers (LNAs) is presented. The LNA, which was originally proposed for the mitigation of single-event transients (SETs) in a radiation environment, uses inverse-mode silicon-germanium (SiGe) heterojunction bipolar… read more here.
Keywords: mode; low noise; sige; performance ... See more keywords