A Comparative Study on Hot-Carrier Injection in 5-Story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2772871
Abstract: The hot-carrier degradation of the junctionless mode (JM) and the inversion mode (IM) of five-story vertically integrated gate-all-around (GAA) MOSFETs is investigated for the first time. It is found that the degradation of drain current… read more here.
Keywords: mode; junctionless mode; vertically integrated; inversion mode ... See more keywords
Inversion-Mode In0.53Ga0.47 As MOSFET with f T = 275 GHz and high V eff
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Express"
DOI: 10.35848/1882-0786/acccd4
Abstract: In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge,… read more here.
Keywords: inversion; inversion mode; in0 53ga0; ghz ... See more keywords