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Published in 2024 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2024.3409579
Abstract: This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580…
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Keywords:
inversion;
junctionless inversion;
inversion mode;
temperature ... See more keywords
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Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2772871
Abstract: The hot-carrier degradation of the junctionless mode (JM) and the inversion mode (IM) of five-story vertically integrated gate-all-around (GAA) MOSFETs is investigated for the first time. It is found that the degradation of drain current…
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Keywords:
mode;
junctionless mode;
vertically integrated;
inversion mode ... See more keywords
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Published in 2023 at "Applied Physics Express"
DOI: 10.35848/1882-0786/acccd4
Abstract: In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge,…
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Keywords:
inversion;
inversion mode;
in0 53ga0;
ghz ... See more keywords