The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
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DOI: 10.1088/1361-6641/ac0d98
Abstract: Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm2 V s−1 if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may… read more here.
Keywords: inverted algaas; mobility; hybrid systems; gaas interface ... See more keywords