Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted ${p}$ -GaN Channel
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DOI: 10.1109/ted.2018.2824985
Abstract: This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion etching and… read more here.
Keywords: gan channel; normally vertical; gan nanowire; nanowire mosfets ... See more keywords