Investigation on gallium nitride with N-vacancy defect nano-grinding by molecular dynamics
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DOI: 10.1016/j.jmapro.2020.06.018
Abstract: Abstract N-vacancy is an inevitable common point defect in GaN, but its behavior is still unclear during nano-grinding which is an indispensable process technique during some GaN devices manufacturing. In this study, we attempted to… read more here.
Keywords: molecular dynamics; vacancy; gallium nitride; nano grinding ... See more keywords