Investigation of Imprint in FE-HfO₂ and Its Recovery
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3025846
Abstract: Ferroelectric (FE)-HfO2-based FETs (FEFETs) are one of the most promising candidates for emerging memories. However, the FE material suffers from a unique reliability phenomenon known as imprint: the coercive voltage shifts during data retention, which… read more here.
Keywords: domain switching; investigation imprint; imprint; imprint recovery ... See more keywords