Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application
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DOI: 10.1016/j.jlumin.2021.117937
Abstract: Abstract Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (μLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investigate these defects directly… read more here.
Keywords: sidewall; reactive ion; ion etching; ion ... See more keywords