Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors
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DOI: 10.3390/mi14020439
Abstract: We present a fully analytical model and physical investigation on the source resistance (RS) in InxGa1−xAs quantum-well high-electron mobility transistors based on a three-layer TLM system. The RS model in this work was derived by… read more here.
Keywords: source resistance; investigation source; physical investigation; source ... See more keywords