Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
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DOI: 10.1016/j.apsusc.2020.146016
Abstract: Abstract We have analysed electrical properties of extended defects and interfaces in fully strained and partially relaxed InxGa1-xN/GaN heterostructures by means of Kelvin probe force microscopy and surface photovoltage spectroscopy. The study highlights the role… read more here.
Keywords: gan heterostructures; extended defects; surface photovoltage; inxga1 gan ... See more keywords
Development of InxGa1-xN/GaN axial multiple quantum well nanowire for solar cell applications
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DOI: 10.1016/j.ijleo.2019.163844
Abstract: Abstract In this paper, we report a simulation and investigation of a single InxGa1-xN/GaN axial multiple quantum well nanowire (MQWNW) solar cell of radius r = 190 nm and a length of L = 1165 nm. Our results have been shown… read more here.
Keywords: inxga1 gan; gan axial; solar cell; inxga1 ... See more keywords
GaN-based parallel micro-light-emitting diode arrays with dual-wavelength InxGa1-xN/GaN MQWs for visible light communication.
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DOI: 10.1364/oe.452679
Abstract: The dual-wavelength InxGa1-xN/GaN micro light emitting diode (Micro-LED) arrays are fabricated by flip-chip parallel connection. It is noted that the Micro-LED arrays with smaller diameter present considerably bigger light output power density (LOPD). For all… read more here.
Keywords: micro leds; micro; wavelength inxga1; inxga1 gan ... See more keywords