Surface‐interface analysis of InxGa1‐xAs/InP heterostructure in positive and negative mismatch system
Sign Up to like & getrecommendations! Published in 2019 at "Surface and Interface Analysis"
DOI: 10.1002/sia.6609
Abstract: The change of In content in the InxGa1‐xAs/InP system leads to the variation of the lattice constant and thereby to the negative mismatch between the base InP and the positive mismatch. Here, we studied the… read more here.
Keywords: system; negative mismatch; surface; mismatch ... See more keywords
Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14020439
Abstract: We present a fully analytical model and physical investigation on the source resistance (RS) in InxGa1−xAs quantum-well high-electron mobility transistors based on a three-layer TLM system. The RS model in this work was derived by… read more here.
Keywords: source resistance; investigation source; physical investigation; source ... See more keywords