Real Space Imaging of Topological Edge States in InAs/GaSb and InAs/InxGa1-xSb Quantum Wells.
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DOI: 10.1021/acsnano.9b05611
Abstract: Structure dependent differential tunneling conductance, dI/dV, profiles obtained using scanning tunneling microscopy on both (110)-cleaved surfaces and (001)-growth surfaces in InAs/GaSb and InAs/InxGa1-xSb quantum wells (QWs), which are platforms of two-dimensional topological insulator (2D-TI), clearly… read more here.
Keywords: inas gasb; edge states; inxga1 xsb; gasb inas ... See more keywords