Hydrogen Iodide (HI) Neutral Beam Etching Characteristics of InGaN and GaN for Micro-LED Fabrication.
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DOI: 10.1088/1361-6528/acd856
Abstract: We investigated the etching characteristics of hydrogen iodide (HI) neutral beam etching (NBE) of GaN and InGaN and compared with Cl2NBE. We showed the advantages of HI NBE vs Cl2NBE, namely: higher InGaN etch rate,… read more here.
Keywords: iodide neutral; hydrogen iodide; beam etching; etching characteristics ... See more keywords