Study of silicon surface implanted by silver ions
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DOI: 10.1016/j.vacuum.2018.10.060
Abstract: Abstract Ag+-ion implantation of single-crystal c-Si at low-energy (E = 30 keV) high-doses (D = 1.25⋅1015–1.5⋅1017 ion/cm2) and current density (J = 2, 8, 15 μA/cm2) was carried out. The changes of Si surface morphology after ion implantation were studied by scanning electron… read more here.
Keywords: surface; ion; study silicon; ion cm2 ... See more keywords