Direct detection of gas-phase mercuric chloride by ion drift - Chemical ionization mass spectrometry
Sign Up to like & getrecommendations! Published in 2020 at "Atmospheric Environment"
DOI: 10.1016/j.atmosenv.2020.117687
Abstract: Abstract Mercury is a persistent environmental pollutant that enters the atmosphere mostly in elemental form (Hg0) and leaves in oxidized form. The atmospheric oxidation mechanism of Hg0 is inadequately constrained because of the limited direct… read more here.
Keywords: chemical ionization; ion drift; ion; gom ... See more keywords
Coupling between Ion Drift and Kinetics of Electronic Current Transients in MAPbBr3 Single Crystals
Sign Up to like & getrecommendations! Published in 2022 at "ACS Energy Letters"
DOI: 10.1021/acsenergylett.1c02578
Abstract: The optoelectronic properties of halide perovskite materials have fostered their utilization in many applications. Unravelling their working mechanisms remains challenging because of their mixed ionic–electronic conductive nature. By registering, with high reproducibility, the long-time current… read more here.
Keywords: coupling ion; current transients; electronic current; ion drift ... See more keywords
Saturation of the ion drift instability in collisional complex plasmas by ion trapping.
Sign Up to like & getrecommendations! Published in 2021 at "Physical review. E"
DOI: 10.1103/physreve.103.063209
Abstract: Competition between ion trapping and collisional detrapping is considered to be an important issue in the stabilization of the ion flow instability. The saturation amplitudes in terms of the particle density are derived and compared… read more here.
Keywords: ion trapping; instability; saturation ion; ion ... See more keywords
Ion Drift and Polarization in Thin SiO2 and HfO2 Layers Inserted in Silicon on Sapphire
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12193394
Abstract: To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a thickness of 50–310 nm and HfO2 layers with… read more here.
Keywords: hfo2 layers; ion drift; sapphire; inserted silicon ... See more keywords