Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202300531
Abstract: In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism… read more here.
Keywords: field sensitivity; pin diodes; ion implanted; magnetic field ... See more keywords
Thermal diffusivity recovery and defect annealing kinetics of self-ion implanted tungsten probed by insitu Transient Grating Spectroscopy
Sign Up to like & getrecommendations! Published in 2022 at "Acta Materialia"
DOI: 10.1016/j.actamat.2022.117926
Abstract: Tungsten is a promising candidate material for plasma-facing armour components in future fusion reactors. A key concern is irradiation-induced degradation of its normally excellent thermal transport properties. In this comprehensive study, thermal diffusivity degradation in… read more here.
Keywords: implanted tungsten; thermal diffusivity; spectroscopy; transient grating ... See more keywords
Ag ion implanted TiO2 photoanodes for fabrication of highly efficient and economical plasmonic dye sensitized solar cells
Sign Up to like & getrecommendations! Published in 2020 at "Chemical Physics Letters"
DOI: 10.1016/j.cplett.2019.137070
Abstract: Abstract Materials with tunable optical and photoelectric properties are prerequisite for the development of highly stable, economical and efficient dye sensitized solar cells (DSSCs). In this direction, improved plasmonic DSSCs with comparatively higher light harvesting… read more here.
Keywords: tio2 photoanodes; dye sensitized; implanted tio2; sensitized solar ... See more keywords
Transport properties for Zn+ ion implanted InN films at low temperature
Sign Up to like & getrecommendations! Published in 2017 at "Materials Letters"
DOI: 10.1016/j.matlet.2017.05.058
Abstract: Abstract An intrinsic superconducting transition of about 3.8 K is observed in Zn-ion implanted InN films. Zn dopants induce the pinning effect, making the superconductivity more robust to magnetic field H . Moreover, the quasi-two-dimensionality of… read more here.
Keywords: films low; transport properties; implanted inn; ion implanted ... See more keywords
Structural and optical characteristics investigations in oxygen ion implanted GaN epitaxial layers
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.104833
Abstract: Abstract This paper presents the lattice disorder-induced effect by oxygen ion implantation in GaN epitaxial layers. Oxygen ion implantation in GaN epitaxial layers is done with fluencies 5 × 1014 cm−2 and 5 × 1015 cm−2 at 120 keV energy on two different… read more here.
Keywords: implanted gan; gan epitaxial; epitaxial layers; ion implanted ... See more keywords
Hydrogen diffusion behavior in CH2P-molecular-ion-implanted silicon wafers for CMOS image sensors
Sign Up to like & getrecommendations! Published in 2022 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2021.106211
Abstract: Abstract Three-dimensional (3D) stacked complementary metal oxide semiconductor (CMOS) image sensors require reduction in leakage current due to interface state defects at the SiO2/Si interface. Hydrocarbon molecular ion implanted silicon wafers have identified the hydrogen… read more here.
Keywords: molecular ion; image sensors; cmos image; ion ... See more keywords
Surface characteristics of nitrogen ion implanted CR-39 polymer: RBS studies
Sign Up to like & getrecommendations! Published in 2019 at "Vacuum"
DOI: 10.1016/j.vacuum.2018.11.028
Abstract: Abstract This paper investigates the surface characteristics of nitrogen ion implanted CR- 39 polymer. The specimens were implanted with 100 keV N+ beam to various fluences of 1 × 1015, 1 × 1016 and 2 × 1016 ions cm−2. The ion implantation induced… read more here.
Keywords: implanted polymer; surface characteristics; characteristics nitrogen; ion ... See more keywords
Quantification of Ion-Implanted Single-Atom Dopants in Monolayer MoS2 via HAADF STEM Using the TEMUL Toolkit
Sign Up to like & getrecommendations! Published in 2022 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927622000757
Abstract: Abstract In recent years, atomic resolution imaging of two-dimensional (2D) materials using scanning transmission electron microscopy (STEM) has become routine. Individual dopant atoms in 2D materials can be located and identified using their contrast in… read more here.
Keywords: ion implanted; quantification ion; microscopy; temul toolkit ... See more keywords
Effects of 850 °C annealing on near-surface defects in Mg-ion-implanted GaN examined using MOS structures
Sign Up to like & getrecommendations! Published in 2025 at "AIP Advances"
DOI: 10.1063/5.0285022
Abstract: The effects of annealing at 850 °C on the near-surface defects in Mg-ion-implanted GaN were examined using subsequently formed metal–oxide–semiconductor structures. Here, Mg ions were implanted at 50 keV at a modest dose of 1.5 × 1011… read more here.
Keywords: near surface; surface; defects ion; ion implanted ... See more keywords
Electrical Control for Extending the Ramsey Spin Coherence Time of Ion-Implanted Nitrogen-Vacancy Centers in Diamond
Sign Up to like & getrecommendations! Published in 2020 at "Physical review applied"
DOI: 10.1103/physrevapplied.14.044033
Abstract: The extension of spin coherence times is a crucial issue for quantum information and quantum sensing. In solid-state systems, suppressing noise through various techniques has been demonstrated. On the other hand, an electrical control for… read more here.
Keywords: electrical control; ion implanted; spin coherence;
Modeling of Fringing Capacitances of Ion-Implanted Double-Gate Junctionless FETs Using Conformal Mapping
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2937205
Abstract: This article reports an analysis of the fringing capacitances of an ion-implanted double-gate (DG) junctionless (JL) field-effect transistors (FETs). The actual nonintegrable Gaussian function of the ion-implanted channel has been replaced by an integrable Gaussian-like… read more here.
Keywords: fringing capacitances; capacitances ion; gate; implanted double ... See more keywords