An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0187064
Abstract: In this work, we report on the high-performance p-GaN/InGaN/AlN multi-heterostructure p-channel metal–semiconductor field effect transistors (MESFETs) with energy-band modulated quantum well-like InGaN channel and low work function metal tungsten (W) as the gate material. A… read more here.
Keywords: ingan aln; band modulated; energy band; ion ioff ... See more keywords
Solution processed Ti3C2 MXene nanosheets as resistive switching layers in flexible RRAM devices for sustainable electronics
Sign Up to like & getrecommendations! Published in 2025 at "Nanotechnology"
DOI: 10.1088/1361-6528/ae029c
Abstract: Due to their exceptional chemical stability and tunable chemical properties particularly the interlayer bonding, MXenes have emerged as promising switching layers in RRAM devices. This work presents the synthesis of nanosheets of a widely explored… read more here.
Keywords: rram devices; solution; ion ioff; flexible rram ... See more keywords