Multiplexed all-solid-state ion-sensitive light-addressable potentiometric sensor (ISLAPS) system based on silicone-rubber for physiological ions detection.
Sign Up to like & getrecommendations! Published in 2021 at "Analytica chimica acta"
DOI: 10.1016/j.aca.2021.338603
Abstract: Light-addressable potentiometric sensor (LAPS) has been widely used in biomedical applications since its advent. As a member of the potentiometric sensors, ion-sensitive LAPS (ISLAPS) can be obtained by modifying ion selective sensing membrane on the… read more here.
Keywords: ion sensitive; silicone; solid state; sensor ... See more keywords
Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.09.072
Abstract: Abstract In this study, we evaluated the pH sensitivity enhancement of AlGaN/GaN ion-sensitive field-effect transistor (ISFET) coated by Al 2 O 3 film on the sensing area utilizing atomic layer deposition (ALD). The presence of… read more here.
Keywords: sensitive field; gan ion; ion sensitive; algan gan ... See more keywords
Live Monitoring of Microenvironmental pH Based on Extracellular Acidosis around Cancer Cells with Cell-Coupled Gate Ion-Sensitive Field-Effect Transistor.
Sign Up to like & getrecommendations! Published in 2018 at "Analytical chemistry"
DOI: 10.1021/acs.analchem.8b03070
Abstract: We demonstrated the live monitoring of cellular respiration using an ion-sensitive field-effect transistor (ISFET), focusing on different types of living cells, namely cancer and normal cells. In particular, we realized the label-free, real-time, and noninvasive… read more here.
Keywords: live monitoring; ion sensitive; effect; cancer cells ... See more keywords
Ion-Sensitive Gated Bipolar Transistor
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2933666
Abstract: In this article, we study the ion-sensitive gated bipolar transistor (ISBiT) by forward biasing the source-body diode of the ion-sensitive field-effect transistor (ISFET). Based on theory, extensive TCAD device simulations, and experiments, it is shown… read more here.
Keywords: tex math; inline formula; ion sensitive;