Impact ionization coefficients and critical electric field in GaN
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DOI: 10.1063/5.0050793
Abstract: Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction diode are experimentally investigated at 223–373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p–-n+ junction structure,… read more here.
Keywords: impact ionization; ionization coefficients; critical electric; electric field ... See more keywords