Total ionization dose and single event effects of a commercial stand-alone 4 Mb resistive random access memory (ReRAM)
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DOI: 10.1016/j.microrel.2019.113443
Abstract: Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R)… read more here.
Keywords: total ionization; ionization dose; reram; event effects ... See more keywords