Synergistic Mechanisms of Ionizing/Displacement Damage in Silicon BJTs: Review and Prospects
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DOI: 10.1109/tns.2025.3600414
Abstract: The combined influence of ionization and displacement phenomena within the space radiation environment has spurred considerable investigation into the synergistic impacts of ionization and displacement damage on bipolar transistors. Prior research has largely concentrated on… read more here.
Keywords: damage silicon; ionizing displacement; displacement damage; damage ... See more keywords