Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Sign Up to like & getrecommendations! Published in 2017 at "Science China Information Sciences"
DOI: 10.1007/s11432-017-9239-5
Abstract: With the continuously scaling down of semiconductor technology, the traditional SiO2 as gate dielectric is approaching the physical and electrical limits. Some problems, such as the increasing leakage current and reliability issues, seriously affect the… read more here.
Keywords: hfo2 based; gate; total ionizing; ionizing dose ... See more keywords
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107952
Abstract: Abstract In this paper, the experimental investigation on the electrical properties of silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT) after total-ionizing-dose (TID) irradiation is presented. We find that the TID irradiation reduces the threshold voltage (Vth),… read more here.
Keywords: irradiation; experimental investigation; soi ligbt; total ionizing ... See more keywords
Modeling of total ionizing dose (TID) effects on the nonuniform distribution of Si/SiO2 interface trap energy states in MOS devices
Sign Up to like & getrecommendations! Published in 2025 at "Scientific Reports"
DOI: 10.1038/s41598-025-01325-3
Abstract: This paper presents a model of total ionizing dose (TID) effects on the generation of Si/SiO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document} interface traps in MOS devices, and their density of states… read more here.
Keywords: dose tid; tid effects; ionizing dose; total ionizing ... See more keywords
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
Sign Up to like & getrecommendations! Published in 2020 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2019.1703114
Abstract: ABSTRACT An anomalous total dose effect that the wider channel device is more susceptible to total ionizing dose than the narrow one is observed with the 0.13 µm H-gate partially depleted silicon-on-insulator technology. The measured results… read more here.
Keywords: channel; total ionizing; ionizing dose; gate partially ... See more keywords
Total ionizing dose effects in multiple-gate field-effect transistor
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa6c02
Abstract: This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and… read more here.
Keywords: gate field; multiple gate; total ionizing; ionizing dose ... See more keywords
Investigation of total ionizing dose effects on SOI FinFETs at elevated temperatures
Sign Up to like & getrecommendations! Published in 2024 at "Physica Scripta"
DOI: 10.1088/1402-4896/ad954b
Abstract: The synergistic effects of total ionization dose (TID) and high temperature (HT) are investigated for n-type Silicon-on-Insulator (n-SOI) FinFETs. Experimental results reveal that both HT and TID will lead to a negative shift in threshold… read more here.
Keywords: investigation total; dose effects; synergistic effects; ionizing dose ... See more keywords
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Access"
DOI: 10.1109/access.2019.2922408
Abstract: Due to the excellent electrical properties, the emerging field-effect transistor (FET) based on two-dimensional transition metal dischalcogenide (TMD) is an excellent candidate for future space applications. However, the device performance is significantly impacted by total-ionizing… read more here.
Keywords: transition metal; ionizing dose; total ionizing; field effect ... See more keywords
Total Ionizing Dose Hardening Methodology in Back Gate Embedded SOI MOSFETs With Ultrathin Buried Oxide
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2025.3587666
Abstract: A novel total ionizing dose (TID) hardening method is proposed based on the innovative back gate embedded silicon on insulator (BGESOI) technology. By elaborately designing the manufacturing process, the symmetric split gate configuration is constructed… read more here.
Keywords: methodology; back gate; gate embedded; ionizing dose ... See more keywords
Mitigated Total Ionizing Dose Response of 16 nm p-FinFETs at Cryogenic Temperature
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2025.3603004
Abstract: Cryogenic temperature and irradiation are challenges for electronic systems operating in deep space. This letter investigates the influence of cryogenic temperature (Cryo-T) on the total ionizing dose (TID) of 16-nm bulk Si p-FinFETs, exposed to… read more here.
Keywords: temperature; inline formula; cryogenic temperature; ionizing dose ... See more keywords
A Novel Approach to Integrating Thermal Performance and Total Ionizing Dose Hardening in Void-Embedded Silicon-on-Insulator MOSFET
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3506504
Abstract: The excellent tolerance against total ionizing dose (TID) effect and high compatibility with conventional technology nodes has been demonstrated in our previous work with void-embedded-silicon-on-insulator (VESOI) device. However, the presence of embedded void structures within… read more here.
Keywords: void embedded; ionizing dose; embedded silicon; performance ... See more keywords
Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2016.2614963
Abstract: Synergetic effects of total-ionizing-dose irradiation on the single event upset (SEU) and single event transient (SET) performance of 40-nm sequential circuits are studied at doses up to 2 Mrad(SiO2). The impacts of input pattern and… read more here.
Keywords: seu set; set induced; total ionizing; ionizing dose ... See more keywords