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Published in 2017 at "Science China Information Sciences"
DOI: 10.1007/s11432-017-9239-5
Abstract: With the continuously scaling down of semiconductor technology, the traditional SiO2 as gate dielectric is approaching the physical and electrical limits. Some problems, such as the increasing leakage current and reliability issues, seriously affect the…
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Keywords:
hfo2 based;
gate;
total ionizing;
ionizing dose ... See more keywords
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Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107952
Abstract: Abstract In this paper, the experimental investigation on the electrical properties of silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT) after total-ionizing-dose (TID) irradiation is presented. We find that the TID irradiation reduces the threshold voltage (Vth),…
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Keywords:
irradiation;
experimental investigation;
soi ligbt;
total ionizing ... See more keywords
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Published in 2020 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2019.1703114
Abstract: ABSTRACT An anomalous total dose effect that the wider channel device is more susceptible to total ionizing dose than the narrow one is observed with the 0.13 µm H-gate partially depleted silicon-on-insulator technology. The measured results…
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Keywords:
channel;
total ionizing;
ionizing dose;
gate partially ... See more keywords
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Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa6c02
Abstract: This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and…
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Keywords:
gate field;
multiple gate;
total ionizing;
ionizing dose ... See more keywords
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Published in 2019 at "IEEE Access"
DOI: 10.1109/access.2019.2922408
Abstract: Due to the excellent electrical properties, the emerging field-effect transistor (FET) based on two-dimensional transition metal dischalcogenide (TMD) is an excellent candidate for future space applications. However, the device performance is significantly impacted by total-ionizing…
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Keywords:
transition metal;
ionizing dose;
total ionizing;
field effect ... See more keywords
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Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2016.2614963
Abstract: Synergetic effects of total-ionizing-dose irradiation on the single event upset (SEU) and single event transient (SET) performance of 40-nm sequential circuits are studied at doses up to 2 Mrad(SiO2). The impacts of input pattern and…
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Keywords:
seu set;
set induced;
total ionizing;
ionizing dose ... See more keywords
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Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2875451
Abstract: We investigated the total ionizing dose (TID) influence on the single-event multiple-cell upsets (MCUs) in 65-nm 6-T static random-access memory and found that MCU sensitivity of the device is enhanced by TID. MCU caused by…
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Keywords:
influence single;
event multiple;
single event;
ionizing dose ... See more keywords
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Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2884037
Abstract: The impact of the manufacturing process on the radiation-induced degradation effects observed in CMOS image sensors (CISs) at the MGy total ionizing dose (TID) levels is investigated. Moreover, the vulnerability of the partially pinned PHDs…
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Keywords:
dark current;
radiation;
ionizing dose;
cmos image ... See more keywords
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Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2019.2890827
Abstract: We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated with 10-keV X-rays under different gate biases. The largest degradation after irradiation occurs at $V_{\mathrm {G}} = -1$…
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Keywords:
sub sub;
sub;
ionizing dose;
length ... See more keywords
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Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2019.2897278
Abstract: This paper investigates the effect of total ionizing dose (TID) on body current in 130-nm partially depleted (PD) silicon-on-insulator input–output nMOSFETs. As the TID increases, the body current lowers and the peak point of body…
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Keywords:
effect total;
body;
ionizing dose;
body current ... See more keywords
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Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3072886
Abstract: Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled technology devices, resulting in drive current degradation with increased cumulative fluence. These…
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Keywords:
state current;
heavy ion;
ionizing dose;
ion ... See more keywords