Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices
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DOI: 10.1016/j.jallcom.2016.10.008
Abstract: Abstract Resistive random access memory (RRAM) has been developing as a most promising non-volatile memory in the current memory technology. In this work, ZnFe 2 O 4 (ZFO) nano powder were firstly prepared by co-precipitation… read more here.
Keywords: ions assisted; memory; resistive switching; memory behaviors ... See more keywords