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Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.11.044
Abstract: We report infrared (IR) spectroscopy studies on defects in carbon containing neutron irradiated Czochralski grown silicon (Cz-Si). Prior to irradiation the material was subjected to high temperature treatments (HT) at 1000 °C. Two weak bands at…
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Keywords:
infrared spectroscopy;
neutron irradiated;
spectroscopy;
irradiated silicon ... See more keywords