Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers
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DOI: 10.1134/s1063782619060071
Abstract: For the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4H-SiC epitaxial layers are carried out by the X-ray and optical methods before and after irradiation with 15-MeV protons… read more here.
Keywords: sic photodetectors; photodetectors schottky; proton irradiation; schottky barriers ... See more keywords