Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer
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DOI: 10.1109/ted.2019.2933026
Abstract: In this article, the performance and triggering mechanism of the single-event burnout (SEB) of a 4H-SiC trench-gate (TG) MOSFET structure are evaluated by the 2-D numerical simulations. The novel N+ island buffer 4H-SiC TG MOSFET… read more here.
Keywords: buffer; single event; structure; island buffer ... See more keywords