Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
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DOI: 10.1016/j.susc.2019.02.002
Abstract: Abstract Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very… read more here.
Keywords: surface; growth mode; thermal annealing; islanding growth ... See more keywords