Effect of Low Temperature Annealing on ITO-on-Si Schottky Junction
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2672802
Abstract: In this letter, we investigate electrical properties of the indium–tin oxide (ITO)-on-Si Schottky junctions and the effect of a low temperature annealing on the properties. The ITO films are deposited by RF magnetron sputtering on… read more here.
Keywords: effect low; ito schottky; low temperature; temperature annealing ... See more keywords
Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors.
Sign Up to like & getrecommendations! Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.005827
Abstract: This work designed an ITO/Ag/n-Si Schottky photodetector with broad wavelength detection and low dark current. The introduction of Ag interfacial layer and post rapid thermal annealing dramatically increase the barrier height of ITO/n-Si Schottky diode… read more here.
Keywords: ito schottky; 360 1650; low dark; dark current ... See more keywords