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Published in 2018 at "RSC Advances"
DOI: 10.1039/c8ra03181a
Abstract: We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics…
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Keywords:
resistive random;
random access;
zn2tio4 resistive;
access memory ... See more keywords