Bipolar resistive switching characteristics of a sol-gel InZnO oxide semiconductor
Sign Up to like & getrecommendations! Published in 2019 at "Physica B: Condensed Matter"
DOI: 10.1016/j.physb.2019.02.048
Abstract: Abstract This paper investigates the bipolar resistive switching characteristics of a sol-gel Ga-free InZnO (IZO) oxide semiconductor. Resistive random-access memories (RRAMs) using IZO films as the resistive switching layers are fabricated. The effects of the… read more here.
Keywords: sol gel; bipolar resistive; switching characteristics; resistive switching ... See more keywords
C-Axis Aligned Composite InZnO via Thermal Atomic Layer Deposition for 3D Nanostructured Semiconductor.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c16879
Abstract: Amorphous oxide semiconductors have been widely studied for various applications, including thin-film transistors (TFTs) for display backplanes and semiconductor memories. However, the inherent instability, limited mobility, and complexity of multicomponent oxide semiconductors for achieving high… read more here.
Keywords: layer deposition; izo; atomic layer; thermal atomic ... See more keywords