Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2019.2947284
Abstract: This article reports the demonstration of a low-voltage ( read more here.
Keywords: power; area efficient; jbs diode; jbs ... See more keywords
Research of Single-Event Burnout in 4H-SiC JBS Diode by Low Carrier Lifetime Control
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2872170
Abstract: This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based… read more here.
Keywords: carrier lifetime; event burnout; jbs; single event ... See more keywords