Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3015211
Abstract: A normally-off SiC-JFET/GaN-HEMT cascode device is recently proposed, featuring a cascode configuration that incorporates a high-voltage (i.e., 1200 V) SiC junction field effect transistor (JFET) and a low-voltage GaN high electron mobility transistor (HEMT). This… read more here.
Keywords: italic control; control; italic italic; jfet ... See more keywords
A New Vertical JFET Power Device for Harsh Radiation Environments
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DOI: 10.3390/en10020256
Abstract: An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high… read more here.
Keywords: harsh radiation; new vertical; power; jfet ... See more keywords
Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs
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DOI: 10.3390/ma15175995
Abstract: 650 V SiC planar MOSFETs with various JFET widths, JFET doping concentrations, and gate oxide thicknesses were fabricated by a commercial SiC foundry on two six-inch SiC epitaxial wafers. An orthogonal P+ layout was used… read more here.
Keywords: 650 sic; jfet; gate oxide; sic planar ... See more keywords
Design of a Differential Low-Noise Amplifier Using the JFET IF3602 to Improve TEM Receiver
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DOI: 10.3390/mi13122211
Abstract: The observed data of transient electromagnetic (TEM) systems is often contaminated by various noises. Even after stacking averages or applying various denoising algorithms, the interference of the system noise floor cannot be eliminated fundamentally, which… read more here.
Keywords: jfet; noise; amplifier; low noise ... See more keywords