An Optimized Ge Pocket SOI JLT with Efforts to Improve the Self-Heating Effect: Doping & Materials Perspective
Sign Up to like & getrecommendations! Published in 2019 at "Silicon"
DOI: 10.1007/s12633-019-00319-x
Abstract: An approach is demonstrated to improve the performance of conventional SOI JLT (Silicon-on-Insulator Junctionless Transistor) i.e., to increase the on-off ratio with an effort to improve the self-heating effect. A small germanium pocket is introduced… read more here.
Keywords: jlt; soi jlt; pocket; heating effect ... See more keywords
Evaluation of Radiation Resiliency on Emerging Junctionless/Dopingless Devices and Circuits
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2019.2949064
Abstract: The growing concern of single event upset (SEU) in sub-20 nm CMOS technology based field-effect transistors (FETs) has become a key challenge. Therefore, in this paper we have investigated performance degradation of digital benchmark circuits… read more here.
Keywords: tex math; dopingless; jlt; junctionless ... See more keywords